View NTE5699_460226.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

NTE5699
TRIAC - 800VRM, 25A TO220 Full Pack
Description: The NTE5699 TRIAC is designed primarily for full-wave AC control applications, such as lighting systems, heater controls, motor controls, and power supplies; or wherever full wave silicon gate controlled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied voltage with positive or negative gate triggering. Features: D Blocking Voltage - 800 Volts D All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability D Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability D Gate Triggering Guaranteed in Four Modes Absolute Maximum Ratings: Peak Repetitive Off-State Voltage, VDRM (TJ = -40 to +125C, 1/2 Sine Wave 50 to 60HZ, Gate Open, Note 1) . . . . . . . . . . . . . 800V Peak Gate Voltage (t 2s), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V On-State Current RMS, IT(RMS) (TC = +80C, Full Cycle Sine Wave 50 to 60HZ, Note 2 ) . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak Non-Repetitive Surge Current, ITSM (One Full Cycle, 60Hz, TC = +125C, Preceded and followed by rated current) . . . . . . 250A Peak Gate Power (t 2s), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate Power (TC = +80C, t 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Peak Gate Current (t 2s), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A RMS Isolation Voltage (TA = +25C, Relative Humidity 20%), V(ISO) . . . . . . . . . . . . . . . . . . . 1500V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8C/W Typical Thermal Resistance, Case-to-Sink, RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60C/W Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. Note 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Electrical Characteristics: (TC = +25C and either polarity of MT2 to MT1, unless otherwise specified) Characteristics Peak Blocking Current (Rated VDRM, Gate Open) TJ = +25C TJ = +125C VTM Symbol IDRM - - - - - 1.4 10 2 1.85 Min Typ Max Unit A mA V
Peak On-State Voltage (ITM = 35A Peak; Peak Pulse Width 2ms, Duty Cycle 2%) Peak Gate Trigger Current (Main Terminal Voltage = 12Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) Peak Gate Trigger Voltage (Main Terminal Voltage = 12Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) (Main Terminal Voltage = Rated VDRM, RL = 10k, TJ = +110C) MT2(+), G(+); MT2(+), G(-); MT2(-), G(-) MT2(-), G(+) Holding Current (Main Terminal Voltage = 12Vdc, Gate Open IT = 200mA) Turn-On Time (Rated VDRM, ITM = 35A, IG = 120mA) Critical Rate of Rise of Off-State Voltage (Rated VDRM, Exponential Waveform, TC = +125C) Critical Rate of Rise of Commutation Voltage (Rated VDRM, ITM = 35A, Commutating di/dt = 13.4A/ms, Gate Unenergized, TC = +80C)
IGT - - - - VGT - - - - 0.2 0.2 IH - 1.1 1.1 1.1 1.3 0.4 0.4 10 2.0 2.0 2.0 2.5 - - 50 20 20 20 30 50 50 50 75
mA
V
mA
tgt dv/dt dv/dt(c)
- - -
1.5 40 5
- - -
s V/s V/s
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
MT2 Gate
MT1
.408 (10.36) Max .280 (7.11)
.185 (4.7) .110 (2.79)
.347 (8.8) .690 (17.53) .490 (12.45)
MT1
MT2 Gate
.500 (12.7) Min
.100 (2.54)
.105 (2.66)

▲Up To Search▲

Price & Availability of NTE5699

	To Download NTE5699 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .